Insights & Engineering Blog

Deep dives into power electronics, PCB design, and technical frameworks.

Leakage Inductance in Planar Transformers — What the 1D Formula Gets Right and Where It Falls Short Design
19/06/2026

Leakage Inductance in Planar Transformers — What the 1D Formula Gets Right and Where It Falls Short

I compared the standard 1D analytical formula for planar transformer leakage inductance against Ansys Maxwell 2D FEA simulations across five PCB winding geometries.

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Replicating Physical PCB Parasitics in a 1200V SiC Double Pulse Test — An LTSpice Observational Study Perspectives
June 12, 2026

Replicating Physical PCB Parasitics in a 1200V SiC Double Pulse Test — An LTSpice Observational Study

A 1200V SiC Double Pulse Test replicated in LTSpice reveals two phases of gate-loop behaviour — unmitigated oscillation at +45V/−55V, and complete suppression above the critical damping threshold of 7

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Why UCC21755 Gate Driver Works in Simulation but Misbehaves on the Bench Perspectives
05/06/2026

Why UCC21755 Gate Driver Works in Simulation but Misbehaves on the Bench

Ten field-proven best practices for the UCC14141 isolated bias power module and UCC21755 SiC gate driver — covering MLCC derating, decoupling hierarchy, PWM signal integrity, gate loop minimisation.

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Why Does Parasitic Loop Inductance Destroy SiC Switching Performance? Perspectives
29/05/2026

Why Does Parasitic Loop Inductance Destroy SiC Switching Performance?

Parasitic loop inductance is invisible on the schematic and lethal in a SiC circuit. What it is, where it hides in your PCB, and why V = L × dI/dt is the equation that decides whether your SiC device.

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